dated : 24/06/2003 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? MPS8599 pnp silicon amplifier transistor on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (ta=25 o c) symbol value unit collector emitter voltage -v ceo 80 v collector base voltage -v cbo 80 v emitter base voltage -v ebo 5 v collector current -i c 500 ma total device dissipation @ t a =25 o c derate above 25 o c p tot 625 5 mw mw/ o c total device dissipation @ t c =25 o c derate above 25 o c p tot 1.5 12 w mw/ o c operating and storage junction temperature range t j ,t s -55 to +150 o c thermal resistance, junction to ambient r ja 200 o c/w thermal resistance, junction to case r jc 83.3 o c/w
dated : 24/06/2003 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? MPS8599 characteristics (t a =25 o c) symbol min. typ. max. unit dc current gain at -v ce =5v, -i c =1ma at -v ce =5v, -i c =10ma at -v ce =5v, -i c =100ma h fe h fe h fe 100 100 75 - - - 300 - - - - - collector saturation voltage at -i c =100ma, -i b =5ma at -i c =100ma, -i b =10ma -v cesat -v cesat - - - - 0.4 0.3 v v base emitter on voltage at -v ce =5v, -i c =10ma -v be(on) 0.6 - 0.8 v collector-emitter breakdown voltage at -i c =10ma -v (br)ceo 80 - - v collector-base breakdown voltage at -i c =100 a -v (br)cbo 80 - - v emitter-base breakdown voltage at -i e =10 a -v (br)ebo 5 - - v collector cutoff current at -v ce =60v -i ces - - 0.1 a collector cutoff current at -v cb =80v -i cbo - - 0.1 a emitter cutoff current at -v eb =4v -i ebo - - 0.1 a current-gain-bandwidth product at -v ce =5v, -i c =10ma, f=100mhz f t 150 - - mhz output capacitance at -v cb =5v, f=1mhz c obo - - 8 pf input capacitance at -v eb =0.5v, f=1mhz c ibo - - 30 pf notes: pulse test: pulse width Q 300 s, duty cycle=2%.
dated : 24/06/2003 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? MPS8599 30 2 t j =25 c duty cycle 10% 0.4 v o l t a g e , v 0 0.2 0.2 0.6 0.8 1 -1 -10 -100 i c , ( m a ) -1000 -1 -55 c d c c u r r e n t g a i n -0.2 vcesat@ic/ib=10 1 ic, ma 10 100 200 30 -1 ic, ma -10 vce= -5v -200 -100 -10 -0.1 thermal limit "on" voltages vbesat@ic/ib=10 vbe@vce=5v second breakdown limit vce, v -10 100 300 -100 10 active - region safe operating area current limit -10 ic, ma 100 t i m e , n s -100 1000 dc current gain 25 c t j =125 c td@vbe(off)= -0.5v ic, ma -100 -200 reverse voltage, v t f t r t s switching times -1 vcc= -40v ic/ib=10 ib1=ib2 tj=25 c -10 -100 t j =25 c f t ( m h z ) 70 100 300 200 v ce = -1v current gain - bandwidth product -5v 20 c a p a c i t a n c e , p f 4 10 40 cobo cibo capacitance t j =25 c
dated : 24/06/2003 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? MPS8599 ic=10ma t j =25 c 2 0.02 0 0.4 v c e , v 0.8 1.2 1.6 0.2 -1 100ma 0.1 i b , ma 1 20ma 50ma t e m p e r a t u r e c o e f f i c i e n t , m v / c 10 20 -3 -2.6 200ma -1.8 -2.2 -1.4 collector saturation region 1 ic, ma 10 r vb for v be -55 c to 125 c 100 200 base emitter temperature coefficient
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